DMN2300UFB4-7B

Diodes Incorporated

DMN2300UFB4-7B

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet DMN2300UFB4-7B
11 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet DMN2300UFB4-7B

Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PBCC-N3
Configuration N-CH
Package Shape RECTANGULAR
Package Style (Meter) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e4
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish NICKEL PALLADIUM GOLD
DLA Qualification Not Qualified
Terminal Position BOTTOM
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.47
Drain Current-Max (ID) (A) 1.3
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Drain-source On Resistance-Max (ohm) 0.175
Time@Peak Reflow Temperature-Max (s) 30

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