BC850CLT1G

ONSEMI

BC850CLT1G

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet BC850CLT1G
41 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet BC850CLT1G

Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R

Technical Data
JESD-30 Code R-PDSO-G3
Configuration SINGLE
JEDEC-95 Code TO-236
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
VCEsat-Max (V) 0.6
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 420
Power Dissipation-Max (W) 0.3
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260
Collector Current-Max (IC) (A) 0.1
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Collector-emitter Voltage-Max (V) 45
Collector-base Capacitance-Max (pF) 4.5
Transition Frequency-Nom (fT) (MHz) 100
Time@Peak Reflow Temperature-Max (s) 30

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