FDG6303N

ONSEMI

no image
 
FDG6303N

FDG6303N

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time

15 results found
HX1188NLT
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Increasing
Increasing
52207-0485
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
52610-2633
Available
Available
High
High
Stable
Stable
Stable
Stable
AP5100WG-7
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
CR-2032L/BD
Available
Available
Low
Low
Stable
Stable
Decreasing
Decreasing
HDC2010YPAR
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
BR-1632A/HAN
Available
Available
Medium
Medium
Stable
Stable
Decreasing
Decreasing
NRC04J471TRF
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
WR04X3001FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
WR12X1543FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
74HC4051D,653
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
0603B222K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Decreasing
Decreasing
SN74LVC1G00DCKR
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
2ED020I12FIXUMA...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
NFR25H0002200JR...
Available
Available
Medium
Medium
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Transistors

Lead Time     99 weeks
Data Sheet     Download FDG6303N datasheet FDG6303N

Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R

Technical Data

Manufacturer onsemi
MPN FDG6303N
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration 2 N-Channel (Dual)
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.3000
Drain Current-Max (ID) (A) 0.5000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Drain-source On Resistance-Max (ohm) 0.4500
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDG6303N optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDG6303N ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDG6303N in the documentation section.

Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R