FDG6303N ONSEMI

FDG6303N ONSEMI
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Semiconductors

Transistors

Lead Time     9 weeks
Data Sheet     Download FDG6303N datasheet FDG6303N

Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R

Technical Data

Manufacturer onsemi
MPN FDG6303N
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration 2 N-Channel (Dual)
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.3000
Drain Current-Max (ID) (A) 0.5000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Drain-source On Resistance-Max (ohm) 0.4500
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDG6303N optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDG6303N ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDG6303N in the documentation section.

Trans MOSFET N-CH 25V 0.5A 6-Pin SC-88 T/R

FDC6321C