BSM250D17P2E004

ROHM Semiconductor

BSM250D17P2E004

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

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Semiconductors

Small Signal Field-Effect Transistors

Lead time 16 weeks

Trans MOSFET N-CH SiC 1.7KV 250A 11-Pin

Technical Data
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration 2 N-Channel (Half Bridge)

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for ROHM Semiconductor BSM250D17P2E004?

You can download the user manual and technical specifications for ROHM Semiconductor BSM250D17P2E004 in the documentation section.

What are the key features of ROHM Semiconductor BSM250D17P2E004?

Trans MOSFET N-CH SiC 1.7KV 250A 11-Pin

How does ROHM Semiconductor BSM250D17P2E004 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, BSM250D17P2E004 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH SiC 1.7KV 250A 11-Pin allows minimizing losses and increasing the overall system efficiency.

Why is BSM250D17P2E004 suitable for complex power management systems?

As a component of the subcategory Semiconductors, BSM250D17P2E004 ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH SiC 1.7KV 250A 11-Pin makes it a reliable element in multi-level power systems.