FDC6321C

ONSEMI

no image
 
FDC6321C

FDC6321C

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Increasing
Price trend
Lead time
Increasing
Lead time
15 results found
DS2484R+T
Available
Available
Low
Low
Stable
Stable
Decreasing
Decreasing
SKM75GB12V
Available
Available
High
High
Stable
Stable
Stable
Stable
UCC5390SCDR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
WR08X000PTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
AUIR3313STRL
Available
Available
High
High
Stable
Stable
Stable
Stable
MAX485ECSA+T
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
LTM8026EY#PBF
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
PT06E8-4SSR01
Available
Available
High
High
Stable
Stable
Stable
Stable
0603N100J500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
10M02SCU169C8G
Available
Available
High
High
Stable
Stable
Stable
Stable
AD7284WBSWZ-RL
Available
Available
Medium
Medium
Decreasing
Decreasing
Decreasing
Decreasing
ADP1613ARMZ-R7
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
SSM6N815R,LF(T
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
YU1AH472M130DAM...
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
MT41K128M16JT-1...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Decreasing
Decreasing

Semiconductors

Transistors

Lead Time     13 weeks
Data Sheet     Download FDC6321C datasheet FDC6321C

Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin TSOT-23 T/R

Technical Data

Manufacturer onsemi
MPN FDC6321C
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W) 0.9000
Drain Current-Max (ID) (A) 0.0007
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25.0000
Feedback Cap-Max (Crss) (pF) 9.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.4500
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDC6321C optimizes energy distribution in electronic devices. Its Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin TSOT-23 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDC6321C ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDC6321C in the documentation section.

Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin TSOT-23 T/R

NLAST4051DTR2G