FDN306P

ONSEMI

no image
 
FDN306P

FDN306P

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Decreasing
Lead time
15 results found
FDG6303N
Available
Available
High
High
Stable
Stable
Stable
Stable
788000001
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
AP2553AW6-7
Available
Available
High
High
Decreasing
Decreasing
Decreasing
Decreasing
ML-621S/ZTN
Available
Available
High
High
Stable
Stable
Stable
Stable
TPS2553DRVR
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
WR06X103JGL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
CR32-11R0-FL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
EPM570T144I5N
Available
Available
High
High
Stable
Stable
Stable
Stable
LTM4620IY#PBF
Unavailable
Unavailable
Low
Low
Stable
Stable
Decreasing
Decreasing
0805B105K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
AD8544ARUZ-REEL
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
C42Q2334K6SC000
Available
Available
High
High
Stable
Stable
Stable
Stable
LM5050MKX-1/NOP...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
LMR14206XMK/NOP...
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
MB85RC1MTPNF-G-...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     21 weeks
Data Sheet     Download FDN306P datasheet FDN306P

Trans MOSFET P-CH 12V 2.6A 3-Pin SOT-23 T/R

Technical Data

Manufacturer onsemi
MPN FDN306P
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 0.5000
Drain Current-Max (ID) (A) 2.6000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 12.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Power Dissipation Ambient-Max (W) 0.5000
Drain-source On Resistance-Max (ohm) 0.0400
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDN306P optimizes energy distribution in electronic devices. Its Trans MOSFET P-CH 12V 2.6A 3-Pin SOT-23 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDN306P ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDN306P in the documentation section.

Trans MOSFET P-CH 12V 2.6A 3-Pin SOT-23 T/R