BSC012N06NS

INFINEON TECHNOLOGIES AG

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BSC012N06NS

BSC012N06NS

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time

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Semiconductors

Transistors

Data Sheet     Download BSC012N06NS datasheet BSC012N06NS

MOSFET TRENCH 40<-<100V

Technical Data

Manufacturer infineon technologies ag
MPN BSC012N06NS
JESD-30 Code R-PDSO-N8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 214.0000
Drain Current-Max (ID) (A) 36.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Feedback Cap-Max (Crss) (pF) 120.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 911.0000
Pulsed Drain Current-Max (IDM) (A) 1224.0000
Drain-source On Resistance-Max (ohm) 0.0012
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, BSC012N06NS optimizes energy distribution in electronic devices. Its MOSFET TRENCH 40<-<100V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, BSC012N06NS ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BSC012N06NS in the documentation section.

MOSFET TRENCH 40<-<100V