BSC012N06NS

INFINEON TECHNOLOGIES AG

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BSC012N06NS

BSC012N06NS

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Semiconductors

Transistors

Data Sheet     Download BSC012N06NS datasheet BSC012N06NS

MOSFET TRENCH 40<-<100V

Technical Data

Manufacturer INFINEON TECHNOLOGIES AG
MPN BSC012N06NS
JESD-30 Code R-PDSO-N8
Configuration SINGLE WITH BUILT-IN DIODE
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) ( A ) 36.0000
Feedback Cap-Max (Crss) ( pF ) 120.0000
DS Breakdown Voltage-Min ( V ) 60.0000
Operating Temperature-Max ( Cel ) 175.0000
Operating Temperature-Min ( Cel ) -55.0000
Moisture Sensitivity Level 1.0000
Power Dissipation-Max (Abs) ( W ) 214.0000
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) ( mJ ) 911.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max ( ohm ) 0.0012
Pulsed Drain Current-Max (IDM) ( A ) 1224.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, BSC012N06NS optimizes energy distribution in electronic devices. Its MOSFET TRENCH 40<-<100V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, BSC012N06NS ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BSC012N06NS in the documentation section.

MOSFET TRENCH 40<-<100V