BSC052N03LSATMA1 INFINEON TECHNOLOGIES AG

BSC052N03LSATMA1 INFINEON TECHNOLOGIES AG
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Semiconductors

Transistors

Lead Time     9 weeks
Data Sheet     Download BSC052N03LSATMA1 datasheet BSC052N03LSATMA1

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R

Technical Data

Manufacturer infineon technologies ag
MPN BSC052N03LSATMA1
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 17.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Avalanche Energy Rating (Eas) (mJ) 12.0000
Pulsed Drain Current-Max (IDM) (A) 228.0000
Drain-source On Resistance-Max (ohm) 0.0072
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, BSC052N03LSATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, BSC052N03LSATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BSC052N03LSATMA1 in the documentation section.

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R

BSS138NH6327XTSA2