BSC052N03LSATMA1

INFINEON TECHNOLOGIES AG

BSC052N03LSATMA1
 
BSC052N03LSATMA1

BSC052N03LSATMA1

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time
15 results found
AOD4454
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
104090M001
Available
Available
High
High
Stable
Stable
Stable
Stable
DMP10H4D2S-7
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0402N180J500CT
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
0603N100J500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
NTR06B2002DTRF
Constrained
Constrained
Low
Low
Stable
Stable
Increasing
Increasing
W25Q64JVSSIQTR
Available
Available
Low
Low
Increasing
Increasing
Increasing
Increasing
ADUM1401ARWZ-RL
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Increasing
Increasing
APW8707BQBI-TRG
Available
Available
High
High
Stable
Stable
Stable
Stable
CL21A226MPCLRNC
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
ME2005602311011
Available
Available
Low
Low
Increasing
Increasing
Decreasing
Decreasing
AD5160BRJZ10-RL...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
SIP32419DN-T1-G...
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
GCM31C5C2J103FX...
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
XC95144XL-10TQG...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     27 weeks
Data Sheet     Download BSC052N03LSATMA1 datasheet BSC052N03LSATMA1

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R

Technical Data

Manufacturer infineon technologies ag
MPN BSC052N03LSATMA1
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 17.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Avalanche Energy Rating (Eas) (mJ) 12.0000
Pulsed Drain Current-Max (IDM) (A) 228.0000
Drain-source On Resistance-Max (ohm) 0.0072
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, BSC052N03LSATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, BSC052N03LSATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BSC052N03LSATMA1 in the documentation section.

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R