IS42S16800F-7BLI-TR INTEGRATED SILICON SOLUTION INC

IS42S16800F-7BLI-TR INTEGRATED SILICON SOLUTION INC
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Semiconductors

Semiconductors

Lead Time     143 weeks
Data Sheet     Download IS42S16800F-7BLI-TR datasheet IS42S16800F-7BLI-TR

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA T/R

Technical Data

Manufacturer integrated silicon solution inc
MPN IS42S16800F-7BLI-TR
I/O Type COMMON
Technology CMOS
Width (mm) 8.0000
Access Mode FOUR BANK PAGE BURST
Length (mm) 8.0000
JESD-30 Code S-PBGA-B54
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e2
Memory IC Type SYNCHRONOUS DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 4096.0000
Number of Ports 1.0000
Terminal Finish Tin/Silver (Sn/Ag)
DLA Qualification Not Qualified
Temperature Grade INDUSTRIAL
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 8MX16
Number of Functions 1.0000
Number of Terminals 54.0000
Terminal Pitch (mm) 0.8000
Access Time-Max (ns) 5.4000
Number of Words Code 8M
Memory Density (bits) 134217728.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 3.6000
Supply Voltage-Min (V) 3.0000
Supply Voltage-Nom (V) 3.3000
Number of Words (words) 8388608.0000
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max (A) 0.0020
Supply Current-Max (mA) 100.0000
Interleaved Burst Length 1,2,4,8
Package Equivalence Code BGA54,9X9,32
Clock Frequency-Max (MHz) 143.0000
Moisture Sensitivity Level 3.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, IS42S16800F-7BLI-TR optimizes energy distribution in electronic devices. Its DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, IS42S16800F-7BLI-TR ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IS42S16800F-7BLI-TR in the documentation section.

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA T/R