What documentation is available for LESHAN RADIO CO LTD LMUN5211T1G?

You can download the user manual and technical specifications for LESHAN RADIO CO LTD LMUN5211T1G in the documentation section.

LMUN5211T1G LESHAN RADIO CO LTD

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Semiconductors

Transistors

Datasheet

LMUN5211T1G

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

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Technical Data

Manufacturer leshan radio co ltd

MPN LMUN5211T1G

JESD-30 Code R-PDSO-G3

Configuration SINGLE WITH BUILT-IN RESISTOR

Package Shape RECTANGULAR

Package Style ( Meter ) SMALL OUTLINE

Surface Mount YES

Terminal Form GULL WING

Terminal Position DUAL

Number of Elements 1.0000

Number of Terminals 3.0000

Package Body Material PLASTIC/EPOXY

Polarity/Channel Type NPN

DC Current Gain-Min (hFE) 35.0000

Power Dissipation-Max (W) 0.3100

Moisture Sensitivity Level 1.0000

Transistor Element Material SILICON

Collector Current-Max (IC) (A) 0.1000

Collector-emitter Voltage-Max (V) 50.0000

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Frequently Asked Questions

How does LMUN5211T1G contribute to energy efficiency?

As part of the category Semiconductors and subcategory Transistors, LMUN5211T1G optimizes energy distribution in electronic devices. Its Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R allows minimizing losses and increasing the overall system efficiency.

Why is LMUN5211T1G suitable for complex power management systems?

As a component of the subcategory Transistors, LMUN5211T1G ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

What documentation is available for LMUN5211T1G?

You can download the user manual and technical specifications for LMUN5211T1G in the documentation section.

What are the key features of LMUN5211T1G?

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

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