LMUN5211T1G

LESHAN RADIO CO LTD

LMUN5211T1G
 
LMUN5211T1G

LMUN5211T1G

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Availability
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High
Design risk
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Stable
Price trend
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Stable
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Semiconductors

Transistors

Data Sheet     Download LMUN5211T1G datasheet LMUN5211T1G

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Technical Data

Manufacturer leshan radio co ltd
MPN LMUN5211T1G
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 35.0000
Power Dissipation-Max (W) 0.3100
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
Collector Current-Max (IC) (A) 0.1000
Collector-emitter Voltage-Max (V) 50.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, LMUN5211T1G optimizes energy distribution in electronic devices. Its Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, LMUN5211T1G ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for LMUN5211T1G in the documentation section.

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R