LMUN5211T1G

Leshan Radio Co. Ltd.

LMUN5211T1G

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Design risk

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Lead time

Semiconductors

Small Signal Bipolar Transistors

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Semiconductors

Small Signal Bipolar Transistors

Lead time 16 weeks
Data sheet LMUN5211T1G

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Technical Data
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 35
Power Dissipation-Max (W) 0.31
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Collector Current-Max (IC) (A) 0.1
Collector-emitter Voltage-Max (V) 50

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Leshan Radio Co. Ltd. LMUN5211T1G?

You can download the user manual and technical specifications for Leshan Radio Co. Ltd. LMUN5211T1G in the documentation section.

What are the key features of Leshan Radio Co. Ltd. LMUN5211T1G?

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

How does Leshan Radio Co. Ltd. LMUN5211T1G contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, LMUN5211T1G optimizes energy distribution in electronic devices. Its Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R allows minimizing losses and increasing the overall system efficiency.

Why is LMUN5211T1G suitable for complex power management systems?

As a component of the subcategory Semiconductors, LMUN5211T1G ensures stable output voltage even when the load changes. Its Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R makes it a reliable element in multi-level power systems.