AONS66402
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MOSFET N-CH 40V 49A/85A
Application | SWITCHING |
JESD-30 Code | R-PDSO-F5 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | FLAT |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Terminals | 5 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (W) | 119 |
Drain Current-Max (ID) (A) | 85 |
Moisture Sensitivity Level | 1 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 40 |
Operating Temperature-Max (Cel) | 150 |
Operating Temperature-Min (Cel) | -55 |
Avalanche Energy Rating (Eas) (mJ) | 406 |
Pulsed Drain Current-Max (IDM) (A) | 340 |
Drain-source On Resistance-Max (ohm) | 0.0023 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Alpha and Omega Semiconductor AONS66402 in the documentation section.
MOSFET N-CH 40V 49A/85A
As part of the category Semiconductors and subcategory Semiconductors, AONS66402 optimizes energy distribution in electronic devices. Its MOSFET N-CH 40V 49A/85A allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, AONS66402 ensures stable output voltage even when the load changes. Its MOSFET N-CH 40V 49A/85A makes it a reliable element in multi-level power systems.