AT-32032-TR1G
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RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, S Band, Silicon, NPN
| Application | AMPLIFIER |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SINGLE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Terminal Finish | TIN |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Additional Feature | HIGH RELIABILITY |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | NPN |
| Highest Frequency Band | S BAND |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Collector Current-Max (IC) (A) | 0.04 |
| Collector-emitter Voltage-Max (V) | 5.5 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Agilent Technologies, Inc. AT-32032-TR1G in the documentation section.
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, S Band, Silicon, NPN
As part of the category Semiconductors and subcategory Semiconductors, AT-32032-TR1G optimizes energy distribution in electronic devices. Its RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, S Band, Silicon, NPN allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, AT-32032-TR1G ensures stable output voltage even when the load changes. Its RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, S Band, Silicon, NPN makes it a reliable element in multi-level power systems.
