MT47H64M16NF-25E:MTR MICRON TECHNOLOGY INC

MT47H64M16NF-25E:MTR MICRON TECHNOLOGY INC
Availability
Unavailable
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Decreasing
Lead time
15 results found
AX22GKE
Available
Available
High
High
Stable
Stable
Stable
Stable
INA149AIDR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
DRV8844PWPR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
ISO1050DUBR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
TLV7031DPWR
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
IR4427STRPBF
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
PHE13005,127
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
WR04X1000FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
WR12X2400FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
XCF02SVOG20C
Available
Available
High
High
Stable
Stable
Stable
Stable
MAX5969BETB+T
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
0603B104K500CG
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
1206X106K100CT
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
RC0402FR-07232R...
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
S40FC004C1B1C00...
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Semiconductors

Lead Time     11 weeks
Data Sheet     Download MT47H64M16NF-25E:MTR datasheet MT47H64M16NF-25E:MTR

DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R

Technical Data

Manufacturer micron technology inc
MPN MT47H64M16NF-25E:MTR
Technology CMOS
Access Mode MULTI BANK PAGE BURST
JESD-30 Code R-PBGA-B84
Memory Width 16.0000
Package Code BGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type DDR2 DRAM
Operating Mode SYNCHRONOUS
Number of Ports 1.0000
Terminal Finish TIN SILVER COPPER
Temperature Grade OTHER
Terminal Position BOTTOM
Additional Feature SELF REFRESH
Memory Organization 64MX16
Number of Functions 1.0000
Number of Terminals 84.0000
Number of Words Code 64M
Memory Density (bits) 1073741824.0000
Package Body Material PLASTIC/EPOXY
Supply Voltage-Max (V) 1.9000
Supply Voltage-Min (V) 1.7000
Supply Voltage-Nom (V) 1.8000
Number of Words (words) 67108864.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) 0.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT47H64M16NF-25E:M TR optimizes energy distribution in electronic devices. Its DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT47H64M16NF-25E:M TR ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT47H64M16NF-25E:M TR in the documentation section.

DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R

MT47H64M16NF-25E-M