MT47H64M16NF-25E:M
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DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 8.0000 |
| Access Mode | MULTI BANK PAGE BURST |
| Length (mm) | 12.5000 |
| JESD-30 Code | R-PBGA-B84 |
| Memory Width | 16 |
| Package Code | TFBGA |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| J-STD-609 Code | e1 |
| Memory IC Type | DDR2 DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 8192 |
| Number of Ports | 1 |
| Terminal Finish | TIN SILVER COPPER |
| DLA Qualification | Not Qualified |
| Temperature Grade | OTHER |
| Terminal Position | BOTTOM |
| Memory Organization | 64MX16 |
| Number of Functions | 1 |
| Number of Terminals | 84 |
| Terminal Pitch (mm) | 0.800 |
| Access Time-Max (ns) | 0.4000000000000000 |
| Number of Words Code | 64M |
| Memory Density (bits) | 1073741824.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2000 |
| Supply Voltage-Max (V) | 1.90000 |
| Supply Voltage-Min (V) | 1.70000 |
| Supply Voltage-Nom (V) | 1.8 |
| Number of Words (words) | 67108864.0000000000000000 |
| Sequential Burst Length | 4,8 |
| Standby Current-Max (A) | 0.010000000000000 |
| Supply Current-Max (mA) | 260.000000000000000 |
| Interleaved Burst Length | 4,8 |
| Package Equivalence Code | BGA84,9X15,32 |
| Clock Frequency-Max (MHz) | 400.00000 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 85.0 |
| Operating Temperature-Min (Cel) | 0.0 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Micron Technology MT47H64M16NF-25E:M in the documentation section.
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray
As part of the category Semiconductors and subcategory Semiconductors, MT47H64M16NF-25E:M optimizes energy distribution in electronic devices. Its DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, MT47H64M16NF-25E:M ensures stable output voltage even when the load changes. Its DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray makes it a reliable element in multi-level power systems.
