BSZ0506NSATMA1
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Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
Application | SWITCHING |
JESD-30 Code | S-PDSO-N8 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Package Shape | SQUARE |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | NO LEAD |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
J-STD-609 Code | e3 |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Terminal Finish | Tin (Sn) |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Terminals | 8 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL |
Drain Current-Max (ID) (A) | 15 |
Moisture Sensitivity Level | 1 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 30 |
Avalanche Energy Rating (Eas) (mJ) | 20 |
Pulsed Drain Current-Max (IDM) (A) | 160 |
Drain-source On Resistance-Max (ohm) | 0.0053 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG BSZ0506NSATMA1 in the documentation section.
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
As part of the category Semiconductors and subcategory Semiconductors, BSZ0506NSATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, BSZ0506NSATMA1 ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R makes it a reliable element in multi-level power systems.