BSZ0506NSATMA1 INFINEON TECHNOLOGIES AG

BSZ0506NSATMA1 INFINEON TECHNOLOGIES AG
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Semiconductors

Transistors

Lead Time     53 weeks
Data Sheet     Download BSZ0506NSATMA1 datasheet BSZ0506NSATMA1

Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R

Technical Data

Manufacturer infineon technologies ag
MPN BSZ0506NSATMA1
Application SWITCHING
JESD-30 Code S-PDSO-N8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 15.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Avalanche Energy Rating (Eas) (mJ) 20.0000
Pulsed Drain Current-Max (IDM) (A) 160.0000
Drain-source On Resistance-Max (ohm) 0.0053
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, BSZ0506NSATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, BSZ0506NSATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BSZ0506NSATMA1 in the documentation section.

Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R

BTS500551TMAATMA1