NTMFWS1D5N08XT1G ONSEMI

NTMFWS1D5N08XT1G ONSEMI
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Semiconductors

Transistors

Lead Time     25 weeks

Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R

Technical Data

Manufacturer onsemi
MPN NTMFWS1D5N08XT1G
Application SWITCHING
JESD-30 Code R-PSSO-F4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 194.0000
Drain Current-Max (ID) (A) 253.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 80.0000
Feedback Cap-Max (Crss) (pF) 25.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 225.0000
Pulsed Drain Current-Max (IDM) (A) 1071.0000
Drain-source On Resistance-Max (ohm) 0.0014
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NTMFWS1D5N08XT1G optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NTMFWS1D5N08XT1G ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NTMFWS1D5N08XT1G in the documentation section.

Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R

NUP2105LT1G