NTMFWS1D5N08XT1G

ONSEMI

no image
 
NTMFWS1D5N08XT1G

NTMFWS1D5N08XT1G

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
1731091672
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
09682635811
Available
Available
Medium
Medium
Stable
Stable
Increasing
Increasing
WR06X472JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
TPS82671SIPR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
WR04X4701FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR04X5112FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Decreasing
Decreasing
WR04X8660FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
WR06X3900FGL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
0603X824K6R3CT
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
1206X476M100CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
LM285BYMX/NOPB
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
TPD1E10B06DPYR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Increasing
Increasing
TPD4E05U06DQAR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
EPM7128AETC100-...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
27-21/R6C-AP1Q2...
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable

Semiconductors

Transistors

Lead Time     27 weeks
Data Sheet     Download NTMFWS1D5N08XT1G datasheet NTMFWS1D5N08XT1G

Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R

Technical Data

Manufacturer onsemi
MPN NTMFWS1D5N08XT1G
Application SWITCHING
JESD-30 Code R-PSSO-F4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 194.0000
Drain Current-Max (ID) (A) 253.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 80.0000
Feedback Cap-Max (Crss) (pF) 25.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 225.0000
Pulsed Drain Current-Max (IDM) (A) 1071.0000
Drain-source On Resistance-Max (ohm) 0.0014
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NTMFWS1D5N08XT1G optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NTMFWS1D5N08XT1G ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NTMFWS1D5N08XT1G in the documentation section.

Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R

MBR0520LT1G