FM25W256-GTR CYPRESS SEMICONDUCTOR CORP

FM25W256-GTR CYPRESS SEMICONDUCTOR CORP
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Stable
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Semiconductors

Memory ICs

Datasheet

    Download FM25W256-GTR datasheet FM25W256-GTR

Memory ICs, FM25W256-GTR, Cypress The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Features High-endurance 100 trillion read/writes Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Restriction of hazardous substances (RoHS) compliant

Technical Data

Manufacturer cypress semiconductor corp
MPN FM25W256-GTR
Technology CMOS
Width (mm) 3.8985
Length (mm) 4.8890
JESD-30 Code R-PDSO-G8
Memory Width 8.0000
Package Code SOP
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Memory IC Type FRAM
Operating Mode SYNCHRONOUS
Parallel/Serial SERIAL
Serial Bus Type SPI
Terminal Finish Pure Tin (Sn)
Write Protection HARDWARE/SOFTWARE
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature 4KV ESD AVAILABLE
Memory Organization 32KX8
Number of Functions 1.0000
Number of Terminals 8.0000
Terminal Pitch (mm) 1.2700
Access Time-Max (ns) 20.0000
Number of Words Code 32K
Memory Density (bits) 262144.0000
Package Body Material PLASTIC/EPOXY
Seated Height-Max (mm) 1.7270
Supply Voltage-Max (V) 5.5000
Supply Voltage-Min (V) 2.7000
Supply Voltage-Nom (V) 3.3000
Data Retention Time-Min 10.0000
Number of Words (words) 32768.0000
Standby Current-Max (A) 0.0000
Standby Voltage-Min (V) 2.7000
Supply Current-Max (mA) 2.0000
Package Equivalence Code SOP8,.25
Clock Frequency-Max (MHz) 20.0000
Moisture Sensitivity Level 3.0000
Peak Reflow Temperature (Cel) 260.0000
Endurance (Write/Erase Cycles) 100000000000000.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Memory ICs, FM25W256-GTR optimizes energy distribution in electronic devices. Its Memory ICs, FM25W256-GTR, Cypress The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Features High-endurance 100 trillion read/writes Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Restriction of hazardous substances (RoHS) compliant allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Memory ICs, FM25W256-GTR ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FM25W256-GTR in the documentation section.

Memory ICs, FM25W256-GTR, Cypress The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Features High-endurance 100 trillion read/writes Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Restriction of hazardous substances (RoHS) compliant

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