EPC2036 EFFICIENT POWER CONVERSION CORP

EPC2036 EFFICIENT POWER CONVERSION CORP
Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
AOD409
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
SFH213FA
Constrained
Constrained
High
High
Decreasing
Decreasing
Stable
Stable
FPF2700MX
Available
Available
High
High
Stable
Stable
Stable
Stable
ICM-20690
Available
Available
High
High
Stable
Stable
Stable
Stable
WR08X562JTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
WR12X750JTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
WW10PR100FTL
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
LMR50410XDBVR
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
0603B104K500CG
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
0603N470J500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0805N7R0D500CT
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
SH18B474K160CT
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
SI1902DL-T1-GE3
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
MX25L3233FM2I-0...
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing
UPD70F3378M2GJA...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     16 weeks
Data Sheet     Download EPC2036 datasheet EPC2036

Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R

Technical Data

Manufacturer efficient power conversion corp
MPN EPC2036
Application SWITCHING
JESD-30 Code S-XXUC-X4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) UNCASED CHIP
Surface Mount YES
Terminal Form UNSPECIFIED
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position UNSPECIFIED
Additional Feature ULTRA LOW RESISTANCE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 1.0000
Transistor Element Material GALLIUM NITRIDE
DS Breakdown Voltage-Min (V) 100.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A) 18.0000
Drain-source On Resistance-Max (ohm) 0.0650
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, EPC2036 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, EPC2036 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for EPC2036 in the documentation section.

Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R

EM4095HMSO16A