EPC2036
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Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R
| Application | SWITCHING |
| JESD-30 Code | S-XXUC-X4 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | SQUARE |
| Package Style (Meter) | UNCASED CHIP |
| Surface Mount | YES |
| Terminal Form | UNSPECIFIED |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Position | UNSPECIFIED |
| Additional Feature | ULTRA LOW RESISTANCE |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) (A) | 1 |
| Transistor Element Material | GALLIUM NITRIDE |
| DS Breakdown Voltage-Min (V) | 100 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Pulsed Drain Current-Max (IDM) (A) | 18 |
| Drain-source On Resistance-Max (ohm) | 0.065 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for EFFICIENT POWER CONVERSION CORP EPC2036 in the documentation section.
Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R
As part of the category Semiconductors and subcategory Semiconductors, EPC2036 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, EPC2036 ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R makes it a reliable element in multi-level power systems.
