EPC2036

EFFICIENT POWER CONVERSION COR...

EPC2036
 
EPC2036

EPC2036

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time

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Semiconductors

Transistors

Lead Time     16 weeks
Data Sheet     Download EPC2036 datasheet EPC2036

Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R

Technical Data

Manufacturer efficient power conversion corp
MPN EPC2036
Application SWITCHING
JESD-30 Code S-XXUC-X4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) UNCASED CHIP
Surface Mount YES
Terminal Form UNSPECIFIED
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position UNSPECIFIED
Additional Feature ULTRA LOW RESISTANCE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 1.0000
Transistor Element Material GALLIUM NITRIDE
DS Breakdown Voltage-Min (V) 100.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A) 18.0000
Drain-source On Resistance-Max (ohm) 0.0650
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, EPC2036 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, EPC2036 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for EPC2036 in the documentation section.

Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R