AT45DB641E-SHN2B-T

Renesas Electronics Corp.

AT45DB641E-SHN2B-T

Availability

Design risk

Price trend

Lead time

Semiconductors

Memory ICs

15 results found

Availability

Design risk

Price trend

Lead time

Available
Low
Increase
Stable
AO4842 (ALPHAOMEGASEMICONDUCTORLTD)
View Details
Unavailable
Low
Decrease
Increase
BAV21WS (DIOTECELECTRONICSCORP)
View Details
Unavailable
Low
Stable
Stable
WR08X562JTL (WALSINTECHNOLOGYCORP)
View Details
Available
Low
Decrease
Increase
A3946KLPTR-T (ALLEGROMICROSYSTEMSLLC)
View Details
Available
High
Stable
Stable
PM100RL1A060 (MITSUBISHIELECTRICCORP)
View Details
Constrained
Low
Increase
Decrease
TLV62080DSGR (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Decrease
Increase
WR06X1000FTL (WALSINTECHNOLOGYCORP)
View Details
Unavailable
Low
Stable
Stable
WR12X6802FTL (WALSINTECHNOLOGYCORP)
View Details
Available
Medium
Stable
Stable
LTM8064EY#PBF (ANALOGDEVICESINC)
View Details
Available
Low
Stable
Increase
SSM2518CPZ-R7 (ANALOGDEVICESINC)
View Details
Available
Medium
Decrease
Decrease
AD7284WBSWZ-RL (ANALOGDEVICESINC)
View Details
Available
Medium
Decrease
Stable
TPS546B24ARVFR (TEXASINSTRUMENTSINC)
View Details
Constrained
Low
Stable
Decrease
LTC4263CDE#TRPBF (ANALOGDEVICESINC)
View Details
Available
High
Decrease
Decrease
MAX96717GTJ/VY+T (ANALOGDEVICESINC)
View Details
Available
Low
Stable
Increase
ACP3225-501-2P-T000 (TDKCORP)
View Details

Semiconductors

Memory ICs

Lead time 16 weeks

64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory

Technical Data
Type NOR TYPE
Technology CMOS
Width (mm) 5.2400
Length (mm) 5.2900
JESD-30 Code R-PDSO-G8
Memory Width 1
Package Code SOP
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e4
Memory IC Type FLASH
Operating Mode SYNCHRONOUS
Parallel/Serial SERIAL
Terminal Finish NICKEL PALLADIUM GOLD
Temperature Grade INDUSTRIAL
Terminal Position DUAL
Memory Organization 64MX1
Number of Functions 1
Number of Terminals 8
Terminal Pitch (mm) 1.270
Number of Words Code 64M
Memory Density (bits) 67108864.0000000000000000
Package Body Material PLASTIC/EPOXY
Seated Height-Max (mm) 2.1600
Supply Voltage-Max (V) 3.60000
Supply Voltage-Min (V) 1.70000
Supply Voltage-Nom (V) 2.3
Number of Words (words) 67108864.0000000000000000
Programming Voltage (V) 1.8
Package Equivalence Code SOP8,.3
Clock Frequency-Max (MHz) 85.00000
Moisture Sensitivity Level 1
Operating Temperature-Max (Cel) 85.0
Operating Temperature-Min (Cel) -40.0

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Renesas Electronics Corp. AT45DB641E-SHN2B-T?

You can download the user manual and technical specifications for Renesas Electronics Corp. AT45DB641E-SHN2B-T in the documentation section.

What are the key features of Renesas Electronics Corp. AT45DB641E-SHN2B-T?

64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory

How does Renesas Electronics Corp. AT45DB641E-SHN2B-T contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, AT45DB641E-SHN2B-T optimizes energy distribution in electronic devices. Its 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory allows minimizing losses and increasing the overall system efficiency.

Why is AT45DB641E-SHN2B-T suitable for complex power management systems?

As a component of the subcategory Semiconductors, AT45DB641E-SHN2B-T ensures stable output voltage even when the load changes. Its 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory makes it a reliable element in multi-level power systems.