CM150DY-24A
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Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
| Application | POWER CONTROL |
| JESD-30 Code | R-XUFM-X7 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| VCEsat-Max (V) | 3 |
| Case Connection | ISOLATED |
| DLA Qualification | Not Qualified |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| Number of Terminals | 7 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 960 |
| Transistor Element Material | SILICON |
| Gate-emitter Voltage-Max (V) | 20 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Collector Current-Max (IC) (A) | 150 |
| Operating Temperature-Max (Cel) | 150 |
| Collector-emitter Voltage-Max (V) | 1200 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Mitsubishi Electric Corp. CM150DY-24A in the documentation section.
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
As part of the category Semiconductors and subcategory Semiconductors, CM150DY-24A optimizes energy distribution in electronic devices. Its Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, CM150DY-24A ensures stable output voltage even when the load changes. Its Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel makes it a reliable element in multi-level power systems.
