CM150DY-24A MITSUBISHI ELECTRIC CORP

CM150DY-24A MITSUBISHI ELECTRIC CORP
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Semiconductors

Transistors

Lead Time     71 weeks

Datasheet

    Download CM150DY-24A datasheet CM150DY-24A

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

Technical Data

Manufacturer mitsubishi electric corp
MPN CM150DY-24A
Application POWER CONTROL
JESD-30 Code R-XUFM-X7
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 3.0000
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2.0000
Number of Terminals 7.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 960.0000
Transistor Element Material SILICON
Gate-emitter Voltage-Max (V) 20.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Collector Current-Max (IC) (A) 150.0000
Operating Temperature-Max (Cel) 150.0000
Collector-emitter Voltage-Max (V) 1200.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, CM150DY-24A optimizes energy distribution in electronic devices. Its Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, CM150DY-24A ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for CM150DY-24A in the documentation section.

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

PM100RL1A060