MT40A512M16LY-062EIT:E

MICRON TECHNOLOGY INC

MT40A512M16LY-062EIT:E
 
MT40A512M16LY-062EIT:E

MT40A512M16LY-062EIT:E

Availability
Unavailable
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time

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Semiconductors

Semiconductors

Lead Time     2 weeks
Data Sheet     Download MT40A512M16LY-062EIT:E datasheet MT40A512M16LY-062EIT:E

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA Tray

Technical Data

Manufacturer micron technology inc
MPN MT40A512M16LY-062EIT:E
I/O Type COMMON
Technology CMOS
Width (mm) 7.5000
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.5000
JESD-30 Code R-PBGA-B96
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type DDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 65536.0000
Reverse Pinout NO
Number of Ports 1.0000
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade INDUSTRIAL
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 512MX16
Number of Functions 1.0000
Number of Terminals 96.0000
Terminal Pitch (mm) 0.8000
Number of Words Code 512M
Memory Density (bits) 8589934592.0000
Package Body Material PLASTIC/EPOXY
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.2600
Supply Voltage-Min (V) 1.1400
Supply Voltage-Nom (V) 1.2000
Number of Words (words) 536870912.0000
Interleaved Burst Length 8.0000
Package Equivalence Code BGA96,9X16,32
Moisture Sensitivity Level 3.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT40A512M16LY-062E IT:E optimizes energy distribution in electronic devices. Its DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT40A512M16LY-062E IT:E ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT40A512M16LY-062E IT:E in the documentation section.

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA Tray

MT41K128M16JT-125-K