1PS79SB30,115

Nexperia BV

1PS79SB30,115

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Semiconductors

Rectifier Diodes

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Semiconductors

Rectifier Diodes

Lead time 16 weeks
Data sheet 1PS79SB30,115

40 V, 0.2 A Schottky barrier diode

Technical Data
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application GENERAL PURPOSE
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Terminal Finish TIN
Number of Phases 1
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 0.2
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

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Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Nexperia BV 1PS79SB30,115?

You can download the user manual and technical specifications for Nexperia BV 1PS79SB30,115 in the documentation section.

What are the key features of Nexperia BV 1PS79SB30,115?

40 V, 0.2 A Schottky barrier diode

How does Nexperia BV 1PS79SB30,115 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, 1PS79SB30,115 optimizes energy distribution in electronic devices. Its 40 V, 0.2 A Schottky barrier diode allows minimizing losses and increasing the overall system efficiency.

Why is 1PS79SB30,115 suitable for complex power management systems?

As a component of the subcategory Semiconductors, 1PS79SB30,115 ensures stable output voltage even when the load changes. Its 40 V, 0.2 A Schottky barrier diode makes it a reliable element in multi-level power systems.