PDTB113ZT,215

NEXPERIA

PDTB113ZT,215
 
PDTB113ZT,215

PDTB113ZT,215

Availability
Constrained
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Decreasing
Lead time
15 results found
FZT458TA
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
LP5036RJVR
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
SN74HC595DR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
HIH-4000-002
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
WR04X56R2FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
AUIRFR6215TRL
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
PM2190.011NLT
Available
Available
High
High
Stable
Stable
Stable
Stable
IRF7769L1TRPBF
Available
Available
Low
Low
Stable
Stable
Decreasing
Decreasing
TLP109(TPL,E(T
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
B72510T0110K062
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
LT3045EDD#TRPBF
Available
Available
High
High
Stable
Stable
Stable
Stable
EPM3032ATI44-10...
Available
Available
High
High
Stable
Stable
Stable
Stable
MX25L3233FM2I-0...
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing
SIP32462DB-T2-G...
Available
Available
Medium
Medium
Decreasing
Decreasing
Increasing
Increasing
CY7C1041GN30-10...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     8 weeks

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

Technical Data

Manufacturer NEXPERIA
MPN PDTB113ZT,215
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code TO-236AB
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
Terminal Finish TIN
Terminal Position DUAL
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type PNP
DC Current Gain-Min (hFE) 70.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260.0000
Collector Current-Max (IC) (A) 0.5000
Collector-emitter Voltage-Max (V) 50.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PDTB113ZT,215 optimizes energy distribution in electronic devices. Its PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PDTB113ZT,215 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PDTB113ZT,215 in the documentation section.

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ