PDTB113ZT,215 NEXPERIA BV

PDTB113ZT,215 NEXPERIA BV
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Semiconductors

Transistors

Lead Time     26 weeks

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

Technical Data

Manufacturer nexperia bv
MPN PDTB113ZT,215
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code TO-236AB
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
Terminal Finish TIN
Terminal Position DUAL
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type PNP
DC Current Gain-Min (hFE) 70.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260.0000
Collector Current-Max (IC) (A) 0.5000
Collector-emitter Voltage-Max (V) 50.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PDTB113ZT,215 optimizes energy distribution in electronic devices. Its PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PDTB113ZT,215 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PDTB113ZT,215 in the documentation section.

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

74AVC4T245PW-118