FDC6321C

FAIRCHILD SEMICONDUCTOR CORP

FDC6321C

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Semiconductors

Small Signal Field-Effect Transistors

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Semiconductors

Small Signal Field-Effect Transistors

Lead time 12 weeks
Data sheet FDC6321C

MOSFETs SSOT-6 COMP N-P-CH

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W) 0.9
Drain Current-Max (ID) (A) 0.00068
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25
Feedback Cap-Max (Crss) (pF) 9
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Drain-source On Resistance-Max (ohm) 0.45
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for FAIRCHILD SEMICONDUCTOR CORP FDC6321C?

You can download the user manual and technical specifications for FAIRCHILD SEMICONDUCTOR CORP FDC6321C in the documentation section.

What are the key features of FAIRCHILD SEMICONDUCTOR CORP FDC6321C?

MOSFETs SSOT-6 COMP N-P-CH

How does FAIRCHILD SEMICONDUCTOR CORP FDC6321C contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, FDC6321C optimizes energy distribution in electronic devices. Its MOSFETs SSOT-6 COMP N-P-CH allows minimizing losses and increasing the overall system efficiency.

Why is FDC6321C suitable for complex power management systems?

As a component of the subcategory Semiconductors, FDC6321C ensures stable output voltage even when the load changes. Its MOSFETs SSOT-6 COMP N-P-CH makes it a reliable element in multi-level power systems.