FDC6321C
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MOSFETs SSOT-6 COMP N-P-CH
Application | SWITCHING |
JESD-30 Code | R-PDSO-G6 |
Configuration | SEPARATE, 2 ELEMENTS |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | GULL WING |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
J-STD-609 Code | e3 |
Operating Mode | ENHANCEMENT MODE |
Terminal Finish | MATTE TIN |
DLA Qualification | Not Qualified |
Terminal Position | DUAL |
Number of Elements | 2 |
Number of Terminals | 6 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (W) | 0.9 |
Drain Current-Max (ID) (A) | 0.00068 |
Moisture Sensitivity Level | 1 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 25 |
Feedback Cap-Max (Crss) (pF) | 9 |
Peak Reflow Temperature (Cel) | 260 |
Operating Temperature-Max (Cel) | 150 |
Drain-source On Resistance-Max (ohm) | 0.45 |
Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for FAIRCHILD SEMICONDUCTOR CORP FDC6321C in the documentation section.
MOSFETs SSOT-6 COMP N-P-CH
As part of the category Semiconductors and subcategory Semiconductors, FDC6321C optimizes energy distribution in electronic devices. Its MOSFETs SSOT-6 COMP N-P-CH allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, FDC6321C ensures stable output voltage even when the load changes. Its MOSFETs SSOT-6 COMP N-P-CH makes it a reliable element in multi-level power systems.