FDG6303N FAIRCHILD SEMICONDUCTOR CORP

FDG6303N FAIRCHILD SEMICONDUCTOR CORP
Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time
15 results found
52610-2633
Available
Available
High
High
Stable
Stable
Stable
Stable
WR06X152JGL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR06X223JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
CPDQC5V0U-HF
Available
Available
Low
Low
Increasing
Increasing
Increasing
Increasing
MAX2991ECM+T
Available
Available
High
High
Stable
Stable
Stable
Stable
SMBJ5343B-TP
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
WR06X1000FTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
MAX3223EETP+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
XR76208ELTR-F
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
TAJB107M006RNJ
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
AD5664ARMZ-REEL...
Constrained
Constrained
Low
Low
Stable
Stable
Increasing
Increasing
SGM8273-1AXN5G/...
Available
Available
High
High
Stable
Stable
Increasing
Increasing
IHLP5050EZER4R7...
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
TCC0603X7R102K5...
Available
Available
High
High
Stable
Stable
Stable
Stable
NACE221M16V6.3X...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable

Semiconductors

Transistors

Lead Time     9 weeks

MOSFETs SC70-6 N-CH 25V

Technical Data

Manufacturer fairchild semiconductor corp
MPN FDG6303N
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.3000
Drain Current-Max (ID) (A) 0.5000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.4500
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDG6303N optimizes energy distribution in electronic devices. Its MOSFETs SC70-6 N-CH 25V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDG6303N ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDG6303N in the documentation section.

MOSFETs SC70-6 N-CH 25V

FDN306P