FDG6303N
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MOSFETs SC70-6 N-CH 25V
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-G6 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Finish | MATTE TIN |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 0.3 |
| Drain Current-Max (ID) (A) | 0.5 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 25 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Drain-source On Resistance-Max (ohm) | 0.45 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for FAIRCHILD SEMICONDUCTOR CORP FDG6303N in the documentation section.
MOSFETs SC70-6 N-CH 25V
As part of the category Semiconductors and subcategory Semiconductors, FDG6303N optimizes energy distribution in electronic devices. Its MOSFETs SC70-6 N-CH 25V allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, FDG6303N ensures stable output voltage even when the load changes. Its MOSFETs SC70-6 N-CH 25V makes it a reliable element in multi-level power systems.
