FDG6303N FAIRCHILD SEMICONDUCTOR CORP

FDG6303N FAIRCHILD SEMICONDUCTOR CORP
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FDG6303N Availability: In Stock
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High
Design risk
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Stable
Price trend
Lead time
Stable
Lead time
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Semiconductors

Transistors

Lead Time     9 weeks

MOSFETs SC70-6 N-CH 25V

Technical Data

Manufacturer fairchild semiconductor corp
MPN FDG6303N
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.3000
Drain Current-Max (ID) (A) 0.5000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 25.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.4500
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDG6303N optimizes energy distribution in electronic devices. Its MOSFETs SC70-6 N-CH 25V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDG6303N ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDG6303N in the documentation section.

MOSFETs SC70-6 N-CH 25V

FDN306P