K4A8G165WC-BCTD

SAMSUNG SEMICONDUCTOR INC

K4A8G165WC-BCTD
 
K4A8G165WC-BCTD

K4A8G165WC-BCTD

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Increasing
Price trend
Lead time
Stable
Lead time
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Semiconductors

DRAMs

Lead Time     36 weeks
Data Sheet     Download K4A8G165WC-BCTD datasheet K4A8G165WC-BCTD

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA

Technical Data

Manufacturer samsung semiconductor inc
MPN K4A8G165WC-BCTD
I/O Type COMMON
Technology CMOS
Width (mm) 7.5000
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.3000
JESD-30 Code R-PBGA-B96
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style ( Meter ) GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Temperature Grade OTHER
Terminal Position BOTTOM
Memory Organization 512MX16
Number of Functions 1.0000
Number of Terminals 96.0000
Terminal Pitch (mm) 0.8000
Number of Words Code 512M
Memory Density (bits) 8589934592.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.2600
Supply Voltage-Min (V) 1.1400
Supply Voltage-Nom (V) 1.2000
Number of Words (words) 536870912.0000
Sequential Burst Length 8.0000
Standby Current-Max (A) 0.0110
Supply Current-Max (mA) 204.0000
Interleaved Burst Length 8.0000
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 1333.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) 0.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory DRAMs, K4A8G165WC-BCTD optimizes energy distribution in electronic devices. Its DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory DRAMs, K4A8G165WC-BCTD ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for K4A8G165WC-BCTD in the documentation section.

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA

FTSH-105-01-L-DV-K-P-TR