K4A8G165WC-BCTD
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DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 7.5 |
| Access Mode | MULTI BANK PAGE BURST |
| Length (mm) | 13.3 |
| JESD-30 Code | R-PBGA-B96 |
| Memory Width | 16 |
| Package Code | TFBGA |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| Memory IC Type | DDR4 DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 8192 |
| Number of Ports | 1 |
| Temperature Grade | OTHER |
| Terminal Position | BOTTOM |
| Memory Organization | 512MX16 |
| Number of Functions | 1 |
| Number of Terminals | 96 |
| Terminal Pitch (mm) | 0.8 |
| Number of Words Code | 512M |
| Memory Density (bits) | 8589934592 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2 |
| Supply Voltage-Max (V) | 1.26 |
| Supply Voltage-Min (V) | 1.14 |
| Supply Voltage-Nom (V) | 1.2 |
| Number of Words (words) | 536870912 |
| Sequential Burst Length | 8 |
| Standby Current-Max (A) | 0.011 |
| Supply Current-Max (mA) | 204 |
| Interleaved Burst Length | 8 |
| Package Equivalence Code | BGA96,9X16,32 |
| Clock Frequency-Max (MHz) | 1333 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Operating Temperature-Max (Cel) | 95 |
| Operating Temperature-Min (Cel) | 0 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Samsung Semiconductor, Inc. K4A8G165WC-BCTD in the documentation section.
DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
As part of the category Semiconductors and subcategory Semiconductors, K4A8G165WC-BCTD optimizes energy distribution in electronic devices. Its DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, K4A8G165WC-BCTD ensures stable output voltage even when the load changes. Its DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA makes it a reliable element in multi-level power systems.
