DMN2300UFB4-7B DIODES INC

DMN2300UFB4-7B DIODES INC
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Semiconductors

Transistors

Lead Time     14 weeks
Data Sheet     Download DMN2300UFB4-7B datasheet DMN2300UFB4-7B

Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R

Technical Data

Manufacturer diodes inc
MPN DMN2300UFB4-7B
Application SWITCHING
JESD-30 Code R-PBCC-N3
Configuration N-CH
Package Shape RECTANGULAR
Package Style ( Meter ) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e4
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish NICKEL PALLADIUM GOLD
DLA Qualification Not Qualified
Terminal Position BOTTOM
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.4700
Drain Current-Max (ID) (A) 1.3000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.1750
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, DMN2300UFB4-7B optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, DMN2300UFB4-7B ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for DMN2300UFB4-7B in the documentation section.

Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R