IRFP240PBF
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Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
| Application | SWITCHING |
| JESD-30 Code | R-PSFM-T3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-247AC |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Terminal Finish | Matte Tin (Sn) - annealed |
| DLA Qualification | Not Qualified |
| Terminal Position | SINGLE |
| Additional Feature | AVALANCHE RATED |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 150 |
| Drain Current-Max (ID) (A) | 20 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 200 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Avalanche Energy Rating (Eas) (mJ) | 510 |
| Pulsed Drain Current-Max (IDM) (A) | 80 |
| Drain-source On Resistance-Max (ohm) | 0.18 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Vishay Intertechnology, Inc. IRFP240PBF in the documentation section.
Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
As part of the category Semiconductors and subcategory Semiconductors, IRFP240PBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, IRFP240PBF ensures stable output voltage even when the load changes. Its Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC makes it a reliable element in multi-level power systems.
