IRFP240PBF VISHAY INTERTECHNOLOGY INC

IRFP240PBF VISHAY INTERTECHNOLOGY INC
Availability
Constrained
Availability
Design risk
Low
Design risk
Price trend
Stable
Price trend
Lead time
Increasing
Lead time
15 results found
FPF2215
Available
Available
High
High
Stable
Stable
Decreasing
Decreasing
H5007NLT
Available
Available
High
High
Stable
Stable
Stable
Stable
SKM75GB12V
Available
Available
High
High
Stable
Stable
Stable
Stable
LNK623DG-TL
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
TPS5430DDAR
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
TCA4311ADGKR
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
WR04X4753FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
MAX17525ATP+T
Available
Available
High
High
Increasing
Increasing
Decreasing
Decreasing
OPA4340EA/2K5
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
TPS259241DRCR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
MAX14775EASA+T
Available
Available
High
High
Increasing
Increasing
Increasing
Increasing
DP83848IVVX/NOP...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
FH33-36S-0.5SH(...
Available
Available
High
High
Stable
Stable
Stable
Stable
88E1512-A0-NNP2...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
NX3225GD-8MHZ-S...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     33 weeks
Data Sheet     Download IRFP240PBF datasheet IRFP240PBF

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Technical Data

Manufacturer vishay intertechnology inc
MPN IRFP240PBF
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247AC
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position SINGLE
Additional Feature AVALANCHE RATED
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 150.0000
Drain Current-Max (ID) (A) 20.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 200.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 510.0000
Pulsed Drain Current-Max (IDM) (A) 80.0000
Drain-source On Resistance-Max (ohm) 0.1800
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IRFP240PBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IRFP240PBF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IRFP240PBF in the documentation section.

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC