CSD16340Q3
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25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
Application | SWITCHING |
JESD-30 Code | S-PDSO-N8 |
Configuration | SINGLE |
Package Shape | SQUARE |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | NO LEAD |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
J-STD-609 Code | e3 |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Terminal Finish | Matte Tin (Sn) |
DLA Qualification | Not Qualified |
Terminal Position | DUAL |
Additional Feature | AVALANCHE RATED |
Number of Elements | 1 |
Number of Terminals | 8 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (W) | 3 |
Drain Current-Max (ID) (A) | 21 |
Moisture Sensitivity Level | 1 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 25 |
Feedback Cap-Max (Crss) (pF) | 69 |
Peak Reflow Temperature (Cel) | 260 |
Operating Temperature-Max (Cel) | 150 |
Operating Temperature-Min (Cel) | -55 |
Avalanche Energy Rating (Eas) (mJ) | 80 |
Pulsed Drain Current-Max (IDM) (A) | 115 |
Drain-source On Resistance-Max (ohm) | 0.0078 |
Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Texas Instruments Incorporated CSD16340Q3 in the documentation section.
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
As part of the category Semiconductors and subcategory Semiconductors, CSD16340Q3 optimizes energy distribution in electronic devices. Its 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, CSD16340Q3 ensures stable output voltage even when the load changes. Its 25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150 makes it a reliable element in multi-level power systems.