SSM6N815R,LF
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Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-F6 |
| Configuration | 2 N-Channel (Dual) |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | FLAT |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 1.4 |
| Drain Current-Max (ID) (A) | 2 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 100 |
| Feedback Cap-Max (Crss) (pF) | 16 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Avalanche Energy Rating (Eas) (mJ) | 10.1 |
| Pulsed Drain Current-Max (IDM) (A) | 4 |
| Drain-source On Resistance-Max (ohm) | 0.142 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Toshiba Corporation SSM6N815R,LF in the documentation section.
Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R
As part of the category Semiconductors and subcategory Semiconductors, SSM6N815R,LF optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SSM6N815R,LF ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R makes it a reliable element in multi-level power systems.
