SSM6N815R,LF(T

TOSHIBA CORP

SSM6N815R,LF(T
 
SSM6N815R,LF(T

SSM6N815R,LF(T

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
BAV21WS
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
MR25H10CDF
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
TPS54232DR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
SBCP53-16T1G
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
INA296A3IDDFR
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
MAX17525ATP+T
Available
Available
High
High
Increasing
Increasing
Decreasing
Decreasing
MAX6010AEUR+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
0603B332K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
0603N101J500CT
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
SDSDQAF3-008G-I
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
S34ML08G101TFI0...
Unavailable
Unavailable
Medium
Medium
Stable
Stable
Stable
Stable
GRM21BR71C475KA...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Decreasing
Decreasing
NFR25H0002200JR...
Available
Available
Medium
Medium
Decreasing
Decreasing
Decreasing
Decreasing
88E1111-B2-BAB2...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Increasing
Increasing
400HXG470MEFCSN...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     17 weeks
Data Sheet     Download SSM6N815R,LF(T datasheet SSM6N815R,LF(T

Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R

Technical Data

Manufacturer toshiba corp
MPN SSM6N815R,LF(T
Application SWITCHING
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position DUAL
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 1.4000
Drain Current-Max (ID) (A) 2.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 100.0000
Feedback Cap-Max (Crss) (pF) 16.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.1420
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SSM6N815R,LF optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SSM6N815R,LF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SSM6N815R,LF in the documentation section.

Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F T/R

TLP109-TPL-E