SKM195GAL07E3
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Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel
| Application | POWER CONTROL |
| JESD-30 Code | R-XUFM-X5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| VCEsat-Max (V) | 1.9 |
| Case Connection | ISOLATED |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Element Material | SILICON |
| Turn-on Time-Nom (ton) (ns) | 174 |
| Gate-emitter Voltage-Max (V) | 20 |
| Turn-off Time-Nom (toff) (ns) | 712 |
| Collector Current-Max (IC) (A) | 266 |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -40 |
| Gate-emitter Thr Voltage-Max (V) | 6.4 |
| Collector-emitter Voltage-Max (V) | 650 |
| Screening Level / Reference Standard | IEC-60747-1 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for SEMIKRON INTERNATIONAL SKM195GAL07E3 in the documentation section.
Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel
As part of the category Semiconductors and subcategory Semiconductors, SKM195GAL07E3 optimizes energy distribution in electronic devices. Its Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SKM195GAL07E3 ensures stable output voltage even when the load changes. Its Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel makes it a reliable element in multi-level power systems.
