SKM195GAL07E3 SEMIKRON INTERNATIONAL

SKM195GAL07E3 SEMIKRON INTERNATIONAL
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Semiconductors

Transistors


Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel

Technical Data

Manufacturer semikron international
MPN SKM195GAL07E3
Application POWER CONTROL
JESD-30 Code R-XUFM-X5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 1.9000
Case Connection ISOLATED
Terminal Position UPPER
Number of Elements 1.0000
Number of Terminals 5.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 174.0000
Gate-emitter Voltage-Max (V) 20.0000
Turn-off Time-Nom (toff) (ns) 712.0000
Collector Current-Max (IC) (A) 266.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -40.0000
Gate-emitter Thr Voltage-Max (V) 6.4000
Collector-emitter Voltage-Max (V) 650.0000
Screening Level / Reference Standard IEC-60747-1
Availability In stock

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9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SKM195GAL07E3 optimizes energy distribution in electronic devices. Its Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SKM195GAL07E3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SKM195GAL07E3 in the documentation section.

Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel

ST18000NM000J