SSM6K407TU,LF(T

TOSHIBA CORP

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SSM6K407TU,LF(T

SSM6K407TU,LF(T

Availability
Available
Availability
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High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
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Semiconductors

Transistors

Data Sheet     Download SSM6K407TU,LF(T datasheet SSM6K407TU,LF(T

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Data

Manufacturer TOSHIBA CORP
MPN SSM6K407TU,LF(T
Application SWITCHING
JESD-30 Code R-PDSO-F6
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.5000
Drain Current-Max (ID) (A) 2.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Feedback Cap-Max (Crss) (pF) 25.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.4400
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SSM6K407TU,LF(T optimizes energy distribution in electronic devices. Its Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SSM6K407TU,LF(T ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SSM6K407TU,LF(T in the documentation section.

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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