RB520S30,115 NEXPERIA

RB520S30,115 NEXPERIA
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Semiconductors

Diodes

Lead Time     14 weeks

200 mA low VF Schottky barrier rectifier

Technical Data

Manufacturer nexperia
MPN RB520S30,115
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application EFFICIENCY
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Terminal Finish TIN
Number of Phases 1.0000
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 0.2000
Forward Voltage-Max (V) 0.6000
Reverse Current-Max (uA) 1.0000
Reverse Test Voltage (V) 10.0000
Power Dissipation-Max (W) 0.2750
Moisture Sensitivity Level 1.0000
Peak Reflow Temperature (Cel) 260.0000
Rep Pk Reverse Voltage-Max (V) 30.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Non-rep Pk Forward Current-Max (A) 1.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Diodes, RB520S30,115 optimizes energy distribution in electronic devices. Its 200 mA low VF Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Diodes, RB520S30,115 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for RB520S30,115 in the documentation section.

200 mA low VF Schottky barrier rectifier

NACE221M16V6-3X8TR15F