RB520S30,115
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200 mA low VF Schottky barrier rectifier
| Diode Type | RECTIFIER DIODE |
| Technology | SCHOTTKY |
| Application | EFFICIENCY |
| JESD-30 Code | R-PDSO-F2 |
| Configuration | SINGLE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | FLAT |
| J-STD-609 Code | e3 |
| Terminal Finish | TIN |
| Number of Phases | 1 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Diode Element Material | SILICON |
| Output Current-Max (A) | 0.2 |
| Forward Voltage-Max (V) | 0.6 |
| Reverse Current-Max (uA) | 1 |
| Reverse Test Voltage (V) | 10 |
| Power Dissipation-Max (W) | 0.275 |
| Moisture Sensitivity Level | 1 |
| Peak Reflow Temperature (Cel) | 260 |
| Rep Pk Reverse Voltage-Max (V) | 30 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Non-rep Pk Forward Current-Max (A) | 1 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nexperia BV RB520S30,115 in the documentation section.
200 mA low VF Schottky barrier rectifier
As part of the category Semiconductors and subcategory Semiconductors, RB520S30,115 optimizes energy distribution in electronic devices. Its 200 mA low VF Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, RB520S30,115 ensures stable output voltage even when the load changes. Its 200 mA low VF Schottky barrier rectifier makes it a reliable element in multi-level power systems.
