MT53E1G32D2FW-046WT:B

MICRON TECHNOLOGY INC

MT53E1G32D2FW-046WT:B
 
MT53E1G32D2FW-046WT:B

MT53E1G32D2FW-046WT:B

Availability
Unavailable
Availability
Design risk
Low
Design risk
Price trend
Stable
Price trend
Lead time
Increasing
Lead time

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Semiconductors

Semiconductors

Lead Time     39 weeks
Data Sheet     Download MT53E1G32D2FW-046WT:B datasheet MT53E1G32D2FW-046WT:B

DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray

Technical Data

Manufacturer micron technology inc
MPN MT53E1G32D2FW-046WT:B
I/O Type COMMON
Technology CMOS
Width (mm) 10.0000
Access Mode MULTI BANK PAGE BURST
Length (mm) 14.5000
JESD-30 Code R-PBGA-B200
Memory Width 32.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type LPDDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
Additional Feature IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Memory Organization 1GX32
Number of Functions 1.0000
Number of Terminals 200.0000
Terminal Pitch (mm) 0.8000
Access Time-Max (ns) 3.5000
Number of Words Code 1G
Memory Density (bits) 34359738368.0000
Package Body Material PLASTIC/EPOXY
Seated Height-Max (mm) 1.1000
Supply Voltage-Max (V) 1.1700
Supply Voltage-Min (V) 1.0600
Supply Voltage-Nom (V) 1.1000
Number of Words (words) 1073741824.0000
Sequential Burst Length 16,32
Standby Current-Max (A) 0.0024
Supply Current-Max (mA) 400.0000
Interleaved Burst Length 16,32
Package Equivalence Code BGA200,12X22,32/25
Clock Frequency-Max (MHz) 2133.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) -25.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT53E1G32D2FW-046 WT:B optimizes energy distribution in electronic devices. Its DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT53E1G32D2FW-046 WT:B ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT53E1G32D2FW-046 WT:B in the documentation section.

DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray

MTA36ASF4G72PZ-3G2R1