FF450R12ME4
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INSULATED GATE BIPOLAR TRANSISTO
| JESD-30 Code | R-XUFM-X11 |
| Configuration | Half Bridge Inverter |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| VCEsat-Max (V) | 2.1 |
| Case Connection | ISOLATED |
| DLA Qualification | Not Qualified |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| Number of Terminals | 11 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 2250 |
| Transistor Element Material | SILICON |
| Turn-on Time-Nom (ton) (ns) | 290 |
| Gate-emitter Voltage-Max (V) | 20 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Turn-off Time-Nom (toff) (ns) | 740 |
| Collector Current-Max (IC) (A) | 675 |
| Operating Temperature-Max (Cel) | 150 |
| Collector-emitter Voltage-Max (V) | 1200 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG FF450R12ME4 in the documentation section.
INSULATED GATE BIPOLAR TRANSISTO
As part of the category Semiconductors and subcategory Semiconductors, FF450R12ME4 optimizes energy distribution in electronic devices. Its INSULATED GATE BIPOLAR TRANSISTO allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, FF450R12ME4 ensures stable output voltage even when the load changes. Its INSULATED GATE BIPOLAR TRANSISTO makes it a reliable element in multi-level power systems.
