FF450R12ME4

INFINEON TECHNOLOGIES AG

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FF450R12ME4

FF450R12ME4

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time
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Semiconductors

Transistors


INSULATED GATE BIPOLAR TRANSISTO

Technical Data

Manufacturer infineon technologies ag
MPN FF450R12ME4
JESD-30 Code R-XUFM-X11
Configuration Half Bridge Inverter
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.1000
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2.0000
Number of Terminals 11.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 2250.0000
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 290.0000
Gate-emitter Voltage-Max (V) 20.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Turn-off Time-Nom (toff) (ns) 740.0000
Collector Current-Max (IC) (A) 675.0000
Operating Temperature-Max (Cel) 150.0000
Collector-emitter Voltage-Max (V) 1200.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FF450R12ME4 optimizes energy distribution in electronic devices. Its INSULATED GATE BIPOLAR TRANSISTO allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FF450R12ME4 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FF450R12ME4 in the documentation section.

INSULATED GATE BIPOLAR TRANSISTO