TPS24751RUVR
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2.5-V to 18-V, 3mΩ, 0.01-12A eFuse with driver for external blocking FET 36-VQFN -40 to 85
| Width (mm) | 3.5 |
| Length (mm) | 7 |
| JESD-30 Code | R-PQCC-N36 |
| Package Code | HVQCCN |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| J-STD-609 Code | e4 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| DLA Qualification | Not Qualified |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | QUAD |
| Number of Channels | 1 |
| Number of Functions | 1 |
| Number of Terminals | 36 |
| Terminal Pitch (mm) | 0.5 |
| Adjustable Threshold | YES |
| Input Voltage-Max (V) | 18 |
| Input Voltage-Min (V) | 2.5 |
| Package Body Material | PLASTIC/EPOXY |
| Analog IC - Other Type | POWER SUPPLY SUPPORT CIRCUIT |
| Output Current-Max (A) | 12 |
| Seated Height-Max (mm) | 1 |
| Supply Voltage-Max (V) | 18 |
| Supply Voltage-Min (V) | 2.5 |
| Supply Voltage-Nom (V) | 12 |
| Supply Current-Max (mA) | 1.4 |
| Package Equivalence Code | LCC36,.14X.27,20 |
| Threshold Voltage-Nom (V) | 2.32 |
| Moisture Sensitivity Level | 2 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 85 |
| Operating Temperature-Min (Cel) | -40 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Texas Instruments Incorporated TPS24751RUVR in the documentation section.
2.5-V to 18-V, 3mΩ, 0.01-12A eFuse with driver for external blocking FET 36-VQFN -40 to 85
As part of the category Semiconductors and subcategory Semiconductors, TPS24751RUVR optimizes energy distribution in electronic devices. Its 2.5-V to 18-V, 3mΩ, 0.01-12A eFuse with driver for external blocking FET 36-VQFN -40 to 85 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, TPS24751RUVR ensures stable output voltage even when the load changes. Its 2.5-V to 18-V, 3mΩ, 0.01-12A eFuse with driver for external blocking FET 36-VQFN -40 to 85 makes it a reliable element in multi-level power systems.
