FF300R12ME4

INFINEON TECHNOLOGIES AG

FF300R12ME4

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Design risk

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Semiconductors

Insulated Gate Bipolar Transistors

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Semiconductors

Insulated Gate Bipolar Transistors

Lead time 26 weeks
Data sheet FF300R12ME4

IGBT Modules IGBT 1200V 300A

Technical Data
JESD-30 Code R-XUFM-X11
Configuration Dual
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.1
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2
Number of Terminals 11
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 1600
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 240
Gate-emitter Voltage-Max (V) 20
Peak Reflow Temperature (Cel) NOT SPECIFIED
Turn-off Time-Nom (toff) (ns) 720
Collector Current-Max (IC) (A) 450
Operating Temperature-Max (Cel) 150
Collector-emitter Voltage-Max (V) 1200
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for INFINEON TECHNOLOGIES AG FF300R12ME4?

You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG FF300R12ME4 in the documentation section.

What are the key features of INFINEON TECHNOLOGIES AG FF300R12ME4?

IGBT Modules IGBT 1200V 300A

How does INFINEON TECHNOLOGIES AG FF300R12ME4 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, FF300R12ME4 optimizes energy distribution in electronic devices. Its IGBT Modules IGBT 1200V 300A allows minimizing losses and increasing the overall system efficiency.

Why is FF300R12ME4 suitable for complex power management systems?

As a component of the subcategory Semiconductors, FF300R12ME4 ensures stable output voltage even when the load changes. Its IGBT Modules IGBT 1200V 300A makes it a reliable element in multi-level power systems.