FF600R12ME4

INFINEON TECHNOLOGIES AG

FF600R12ME4

Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

15 results found

Availability

Design risk

Price trend

Lead time

Available
High
Stable
Stable
G3R75MT12D (GENESICSEMICONDUCTORINC)
View Details
Available
Low
Increase
Stable
ZED-F9P-04B (UBLOXAG)
View Details
Unavailable
Low
Decrease
Stable
CR32-1001-FL (ASJPTELTD)
View Details
Available
Low
Decrease
Stable
MAX488ECSA+T (ANALOGDEVICESINC)
View Details
Unavailable
Low
Decrease
Decrease
PMBT3906,235 (NEXPERIA)
View Details
Constrained
Low
Decrease
Stable
0603B474K500CT (WALSINTECHNOLOGYCORP)
View Details
Constrained
Low
Decrease
Stable
0805X106K160CT (WALSINTECHNOLOGYCORP)
View Details
Constrained
Low
Stable
Increase
NTR06B2002DTRF (NICCOMPONENTSCORP)
View Details
Available
High
Decrease
Decrease
CL05B332JA5NNNC (SAMSUNGELECTROMECHANICS)
View Details
Available
High
Stable
Stable
SGMOP07EXS8G/TR (SGMICROCORP)
View Details
Available
Low
Decrease
Stable
UCLAMP5011ZATFT (SEMTECHCORP)
View Details
Available
High
Stable
Stable
XC6SLX9-2CSG324I (ADVANCEDMICRODEVICESINC)
View Details
Constrained
Low
Increase
Decrease
ADM3222ARWZ-REEL7 (ANALOGDEVICESINC)
View Details
Available
High
Stable
Decrease
XC6SLX150-3FGG676C (XILINXINC)
View Details
Constrained
Low
Decrease
Stable
400HXG470MEFCSN35X40 (RUBYCORPORATION)
View Details

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 21 weeks
Data sheet FF600R12ME4

IGBT Modules IGBT 1200V 600A

Technical Data
Application POWER CONTROL
JESD-30 Code R-XUFM-X7
Configuration Dual
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.1
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 3650
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 310
Gate-emitter Voltage-Max (V) 20
Peak Reflow Temperature (Cel) NOT SPECIFIED
Turn-off Time-Nom (toff) (ns) 770
Collector Current-Max (IC) (A) 995
Operating Temperature-Max (Cel) 175
Collector-emitter Voltage-Max (V) 1200
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for INFINEON TECHNOLOGIES AG FF600R12ME4?

You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG FF600R12ME4 in the documentation section.

What are the key features of INFINEON TECHNOLOGIES AG FF600R12ME4?

IGBT Modules IGBT 1200V 600A

How does INFINEON TECHNOLOGIES AG FF600R12ME4 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, FF600R12ME4 optimizes energy distribution in electronic devices. Its IGBT Modules IGBT 1200V 600A allows minimizing losses and increasing the overall system efficiency.

Why is FF600R12ME4 suitable for complex power management systems?

As a component of the subcategory Semiconductors, FF600R12ME4 ensures stable output voltage even when the load changes. Its IGBT Modules IGBT 1200V 600A makes it a reliable element in multi-level power systems.