NT5CC256M16ER-EK

NANYA TECHNOLOGY CORP

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NT5CC256M16ER-EK

NT5CC256M16ER-EK

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time

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Semiconductors

DRAMs

Lead Time     8 weeks
Data Sheet     Download NT5CC256M16ER-EK datasheet NT5CC256M16ER-EK

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TFBGA

Technical Data

Manufacturer nanya technology corp
MPN NT5CC256M16ER-EK
I/O Type COMMON
Technology CMOS
Width (mm) 8.0000
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.0000
JESD-30 Code R-PBGA-B96
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style ( Meter ) GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR3L DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Temperature Grade OTHER
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 256MX16
Number of Functions 1.0000
Number of Terminals 96.0000
Terminal Pitch (mm) 0.8000
Number of Words Code 256M
Memory Density (bits) 4294967296.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.4500
Supply Voltage-Min (V) 1.2830
Supply Voltage-Nom (V) 1.3500
Number of Words (words) 268435456.0000
Sequential Burst Length 8.0000
Standby Current-Max (A) 0.0230
Supply Current-Max (mA) 155.0000
Interleaved Burst Length 8.0000
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 933.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) 0.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory DRAMs, NT5CC256M16ER-EK optimizes energy distribution in electronic devices. Its DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TFBGA allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory DRAMs, NT5CC256M16ER-EK ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NT5CC256M16ER-EK in the documentation section.

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TFBGA

NT6AN512T32AV-J2