NT6AN512T32AV-J2
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DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 10 |
| Access Mode | MULTI BANK PAGE BURST |
| Length (mm) | 15 |
| JESD-30 Code | R-PBGA-B200 |
| Memory Width | 32 |
| Package Code | VFBGA |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| Memory IC Type | LPDDR4 DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 8192 |
| Number of Ports | 1 |
| Temperature Grade | OTHER |
| Terminal Position | BOTTOM |
| Additional Feature | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMIMAL SUPPLY VOLTAGE; TERM PITCH-MAX |
| Memory Organization | 512MX32 |
| Number of Functions | 1 |
| Number of Terminals | 200 |
| Terminal Pitch (mm) | 0.8 |
| Number of Words Code | 512M |
| Memory Density (bits) | 17179869184 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1 |
| Supply Voltage-Max (V) | 1.17 |
| Supply Voltage-Min (V) | 1.06 |
| Supply Voltage-Nom (V) | 1.1 |
| Number of Words (words) | 536870912 |
| Sequential Burst Length | 16,32 |
| Standby Current-Max (A) | 0.06 |
| Supply Current-Max (mA) | 680 |
| Interleaved Burst Length | 16,32 |
| Package Equivalence Code | BGA200,12X22,32/25 |
| Clock Frequency-Max (MHz) | 1866 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Operating Temperature-Max (Cel) | 105 |
| Operating Temperature-Min (Cel) | -30 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nanya Technology Corporation NT6AN512T32AV-J2 in the documentation section.
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
As part of the category Semiconductors and subcategory Semiconductors, NT6AN512T32AV-J2 optimizes energy distribution in electronic devices. Its DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, NT6AN512T32AV-J2 ensures stable output voltage even when the load changes. Its DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA makes it a reliable element in multi-level power systems.
