PMEG100V100ELPDZ NEXPERIA

PMEG100V100ELPDZ NEXPERIA
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Semiconductors

Diodes

Lead Time     22 weeks

100 V, 10 A low leakage current Schottky barrier rectifier

Technical Data

Manufacturer nexperia
MPN PMEG100V100ELPDZ
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application EFFICIENCY
JESD-30 Code R-PDSO-F3
Configuration SINGLE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Case Connection CATHODE
Terminal Finish TIN
Number of Phases 1.0000
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Forward Voltage-Max (V) 0.8500
Reverse Current-Max (uA) 0.8000
Power Dissipation-Max (W) 1.6600
Moisture Sensitivity Level 1.0000
Peak Reflow Temperature (Cel) 260.0000
Rep Pk Reverse Voltage-Max (V) 100.0000
Reverse Recovery Time-Max (us) 0.0140
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Non-rep Pk Forward Current-Max (A) 170.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Diodes, PMEG100V100ELPDZ optimizes energy distribution in electronic devices. Its 100 V, 10 A low leakage current Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Diodes, PMEG100V100ELPDZ ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PMEG100V100ELPDZ in the documentation section.

100 V, 10 A low leakage current Schottky barrier rectifier

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