PMEG3010AESBYL NEXPERIA

PMEG3010AESBYL NEXPERIA
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Semiconductors

Diodes

Lead Time     8 weeks

30 V, 1 A low VF MEGA Schottky barrier rectifier

Technical Data

Manufacturer nexperia
MPN PMEG3010AESBYL
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application GENERAL PURPOSE
JESD-30 Code R-PBCC-N2
Configuration Single
Package Shape RECTANGULAR
Package Style ( Meter ) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
Number of Phases 1.0000
Terminal Position BOTTOM
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Power Dissipation-Max (W) 0.5250
Moisture Sensitivity Level 1.0000
Peak Reflow Temperature (Cel) 260.0000
Rep Pk Reverse Voltage-Max (V) 30.0000
Reverse Recovery Time-Max (us) 0.0035
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Reverse Current-Max 1.25mA
Reverse Recovery Time-Max 3.5ns
Availability In stock

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Diodes, PMEG3010AESBYL optimizes energy distribution in electronic devices. Its 30 V, 1 A low VF MEGA Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Diodes, PMEG3010AESBYL ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PMEG3010AESBYL in the documentation section.

30 V, 1 A low VF MEGA Schottky barrier rectifier

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