PMEG3010AESBYL
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30 V, 1 A low VF MEGA Schottky barrier rectifier
| Diode Type | RECTIFIER DIODE |
| Technology | SCHOTTKY |
| Application | GENERAL PURPOSE |
| JESD-30 Code | R-PBCC-N2 |
| Configuration | Single |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | CHIP CARRIER |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| Number of Phases | 1 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Diode Element Material | SILICON |
| Power Dissipation-Max (W) | 0.525 |
| Moisture Sensitivity Level | 1 |
| Peak Reflow Temperature (Cel) | 260 |
| Rep Pk Reverse Voltage-Max (V) | 30 |
| Reverse Recovery Time-Max (us) | 0.0035 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Reverse Current-Max | 1.25mA |
| Reverse Recovery Time-Max | 3.5ns |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nexperia BV PMEG3010AESBYL in the documentation section.
30 V, 1 A low VF MEGA Schottky barrier rectifier
As part of the category Semiconductors and subcategory Semiconductors, PMEG3010AESBYL optimizes energy distribution in electronic devices. Its 30 V, 1 A low VF MEGA Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, PMEG3010AESBYL ensures stable output voltage even when the load changes. Its 30 V, 1 A low VF MEGA Schottky barrier rectifier makes it a reliable element in multi-level power systems.
