IRF7769L1TRPBF

INFINEON TECHNOLOGIES AG

IRF7769L1TRPBF

Availability

Design risk

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Semiconductors

Small Signal Field-Effect Transistors

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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRF7769L1TRPBF

Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-XBCC-N3
Configuration SINGLE
Package Shape RECTANGULAR
Package Style (Meter) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position BOTTOM
Number of Elements 1
Number of Terminals 9
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 125
Drain Current-Max (ID) (A) 375
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 100
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Power Dissipation Ambient-Max (W) 3.3
Avalanche Energy Rating (Eas) (mJ) 260
Pulsed Drain Current-Max (IDM) (A) 500
Drain-source On Resistance-Max (ohm) 0.0035

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215