CM200DY-24NF MITSUBISHI ELECTRIC CORP

CM200DY-24NF MITSUBISHI ELECTRIC CORP
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Semiconductors

Transistors

Lead Time     44 weeks

Datasheet

    Download CM200DY-24NF datasheet CM200DY-24NF

MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module

Technical Data

Manufacturer mitsubishi electric corp
MPN CM200DY-24NF
Application POWER CONTROL
JESD-30 Code R-XUFM-X7
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.5000
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2.0000
Number of Terminals 7.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 1130.0000
Transistor Element Material SILICON
Gate-emitter Voltage-Max (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Collector Current-Max (IC) (A) 200.0000
Operating Temperature-Max (Cel) 150.0000
Collector-emitter Voltage-Max (V) 1200.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, CM200DY-24NF optimizes energy distribution in electronic devices. Its MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, CM200DY-24NF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for CM200DY-24NF in the documentation section.

MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module

M30624FGAFP