CM200DY-24NF

MITSUBISHI ELECTRIC CORP

CM200DY-24NF
 
CM200DY-24NF

CM200DY-24NF

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time
15 results found
RT9829GQW
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
52610-2633
Available
Available
High
High
Stable
Stable
Increasing
Increasing
AP5100WG-7
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
MAX668EUB+T
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
WR06X222JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR06X472JGL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
ERJ1GNF1871C
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
TCA4311ADGKR
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
TPS54418RTER
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
0805N681J501CT
Constrained
Constrained
Medium
Medium
Stable
Stable
Stable
Stable
WM8960CGEFL/RV
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
C43Q1472M40C000
Available
Available
High
High
Stable
Stable
Stable
Stable
AD5160BRJZ10-RL...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
AD8605ARTZ-REEL...
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
LP2985IM5-3.5/N...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     44 weeks
Data Sheet     Download CM200DY-24NF datasheet CM200DY-24NF

MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module

Technical Data

Manufacturer mitsubishi electric corp
MPN CM200DY-24NF
Application POWER CONTROL
JESD-30 Code R-XUFM-X7
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.5000
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2.0000
Number of Terminals 7.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 1130.0000
Transistor Element Material SILICON
Gate-emitter Voltage-Max (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Collector Current-Max (IC) (A) 200.0000
Operating Temperature-Max (Cel) 150.0000
Collector-emitter Voltage-Max (V) 1200.0000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, CM200DY-24NF optimizes energy distribution in electronic devices. Its MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, CM200DY-24NF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for CM200DY-24NF in the documentation section.

MITSUBISHI ELECTRIC - CM200DY-24NF - IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module