SIS434DN-T1-GE3 VISHAY INTERTECHNOLOGY INC

SIS434DN-T1-GE3 VISHAY INTERTECHNOLOGY INC
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Semiconductors

Transistors

Lead Time     24 weeks
Data Sheet     Download SIS434DN-T1-GE3 datasheet SIS434DN-T1-GE3

Trans MOSFET N-CH 40V 35A 8-Pin PowerPAK 1212 T/R

Technical Data

Manufacturer vishay intertechnology inc
MPN SIS434DN-T1-GE3
JESD-30 Code S-PDSO-C5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 5.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 52.0000
Drain Current-Max (ID) (A) 17.6000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 40.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 45.0000
Pulsed Drain Current-Max (IDM) (A) 60.0000
Drain-source On Resistance-Max (ohm) 0.0076
Time@Peak Reflow Temperature-Max (s) 40.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SIS434DN-T1-GE3 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 40V 35A 8-Pin PowerPAK 1212 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SIS434DN-T1-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SIS434DN-T1-GE3 in the documentation section.

Trans MOSFET N-CH 40V 35A 8-Pin PowerPAK 1212 T/R