SI7110DN-T1-GE3 VISHAY INTERTECHNOLOGY INC

SI7110DN-T1-GE3 VISHAY INTERTECHNOLOGY INC
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Semiconductors

Transistors

Lead Time     47 weeks
Data Sheet     Download SI7110DN-T1-GE3 datasheet SI7110DN-T1-GE3

MOSFET N-CH 20V 13.5A PPAK1212-8

Technical Data

Manufacturer vishay intertechnology inc
MPN SI7110DN-T1-GE3
Application SWITCHING
JESD-30 Code S-XDSO-C5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 5.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 3.8000
Drain Current-Max (ID) (A) 13.5000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 61.0000
Pulsed Drain Current-Max (IDM) (A) 60.0000
Drain-source On Resistance-Max (ohm) 0.0053
Time@Peak Reflow Temperature-Max (s) 30.0000
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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SI7110DN-T1-GE3 optimizes energy distribution in electronic devices. Its MOSFET N-CH 20V 13.5A PPAK1212-8 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SI7110DN-T1-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SI7110DN-T1-GE3 in the documentation section.

MOSFET N-CH 20V 13.5A PPAK1212-8