SI7110DN-T1-GE3
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MOSFET N-CH 20V 13.5A PPAK1212-8
| Application | SWITCHING |
| JESD-30 Code | S-XDSO-C5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | SQUARE |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | C BEND |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Matte Tin (Sn) |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 3.8 |
| Drain Current-Max (ID) (A) | 13.5 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 20 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Avalanche Energy Rating (Eas) (mJ) | 61 |
| Pulsed Drain Current-Max (IDM) (A) | 60 |
| Drain-source On Resistance-Max (ohm) | 0.0053 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Vishay Intertechnology, Inc. SI7110DN-T1-GE3 in the documentation section.
MOSFET N-CH 20V 13.5A PPAK1212-8
As part of the category Semiconductors and subcategory Semiconductors, SI7110DN-T1-GE3 optimizes energy distribution in electronic devices. Its MOSFET N-CH 20V 13.5A PPAK1212-8 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SI7110DN-T1-GE3 ensures stable output voltage even when the load changes. Its MOSFET N-CH 20V 13.5A PPAK1212-8 makes it a reliable element in multi-level power systems.
