SI2324DS-T1-GE3 VISHAY INTERTECHNOLOGY INC

SI2324DS-T1-GE3 VISHAY INTERTECHNOLOGY INC
Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time
15 results found
ICM-20689
Available
Available
High
High
Stable
Stable
Stable
Stable
TL3315NF100Q
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
WR12X1543FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
WW10PR100FTL
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
MP3302DJ-LF-Z
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
0603B102K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
DMN2300UFB4-7B
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
LTC3111EDE#PBF
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
SH21B103K101CT
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
SH21B471K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
UUD1H221MNL1GS
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Decreasing
Decreasing
AD8604ARZ-REEL7
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
MC74LVX4245DTR2...
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
LFXP2-8E-6FTN25...
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
TLE98722QXA40XU...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     50 weeks
Data Sheet     Download SI2324DS-T1-GE3 datasheet SI2324DS-T1-GE3

Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R

Technical Data

Manufacturer vishay intertechnology inc
MPN SI2324DS-T1-GE3
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration N-CH
JEDEC-95 Code TO-236AB
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 2.5000
Drain Current-Max (ID) (A) 2.3000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 100.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.2340
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SI2324DS-T1-GE3 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SI2324DS-T1-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SI2324DS-T1-GE3 in the documentation section.

Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R

SI7234DP-T1-GE3