IXA60IF1200NA IXYS CORP

IXA60IF1200NA IXYS CORP
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Semiconductors

Transistors

Lead Time     52 weeks
Data Sheet     Download IXA60IF1200NA datasheet IXA60IF1200NA

Trans IGBT Chip N-CH 1200V

Technical Data

Manufacturer ixys corp
MPN IXA60IF1200NA
Application POWER CONTROL
JESD-30 Code R-PUFM-X4
Configuration Single
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
Case Connection ISOLATED
Terminal Finish NICKEL
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 290.0000
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 110.0000
Gate-emitter Voltage-Max (V) 20.0000
Turn-off Time-Nom (toff) (ns) 350.0000
Collector Current-Max (IC) (A) 88.0000
Operating Temperature-Max (Cel) 150.0000
Gate-emitter Thr Voltage-Max (V) 6.5000
Collector-emitter Voltage-Max (V) 1200.0000
Screening Level / Reference Standard UL RECOGNIZED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IXA60IF1200NA optimizes energy distribution in electronic devices. Its Trans IGBT Chip N-CH 1200V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IXA60IF1200NA ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IXA60IF1200NA in the documentation section.

Trans IGBT Chip N-CH 1200V

CPC5620ATR