FDN5618P

ONSEMI

no image
 
FDN5618P

FDN5618P

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Increasing
Price trend
Lead time
Increasing
Lead time

15 results found
3240188
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
AMC1311DWVR
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR08X102JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
CR10-1003-FK
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
MAX6817EUT+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
0402B105K6R3CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0603N331J101CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0805B473K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
LM285BYMX/NOPB
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
SKY13405-490LF
Available
Available
Medium
Medium
Increasing
Increasing
Increasing
Increasing
CMOZ1L8TRPBFREE
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
UFZVFHTE-178.2B
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
WL1837MODGIMOCR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
MMICT4078-00-90...
Available
Available
High
High
Stable
Stable
Stable
Stable
XC6SLX25-2FGG48...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     20 weeks
Data Sheet     Download FDN5618P datasheet FDN5618P

Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 T/R

Technical Data

Manufacturer onsemi
MPN FDN5618P
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 0.5000
Drain Current-Max (ID) (A) 1.2500
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Pulsed Drain Current-Max (IDM) (A) 10.0000
Drain-source On Resistance-Max (ohm) 0.1700
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDN5618P optimizes energy distribution in electronic devices. Its Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDN5618P ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDN5618P in the documentation section.

Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 T/R