IRF840PBF VISHAY INTERTECHNOLOGY INC

IRF840PBF VISHAY INTERTECHNOLOGY INC
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Design risk
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Semiconductors

Transistors

Lead Time     14 weeks
Data Sheet     Download IRF840PBF datasheet IRF840PBF

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Technical Data

Manufacturer vishay intertechnology inc
MPN IRF840PBF
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 125.0000
Drain Current-Max (ID) (A) 8.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 500.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 510.0000
Pulsed Drain Current-Max (IDM) (A) 32.0000
Drain-source On Resistance-Max (ohm) 0.8500
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IRF840PBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IRF840PBF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IRF840PBF in the documentation section.

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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